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| Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 s Applications 16.70.3 7.50.2 q High-speed switching (switching power supply, AC adaptor) q For high-frequency power amplification 3.10.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 30 3 6 20 50 2 150 -55 to +150 Unit V V A A mJ 4.0 1.40.1 1.30.2 14.00.5 Solder Dip 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C 1 2 W C C 1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a) 3 Single pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Avalanche energy capacity Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS EAS* Vth RDS(on) | Yfs | Coss ton tf td(off) Conditions VDS = 640V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 L = 4.5mH, ID = 3A, VDD = 50V VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A VDS = 20V, VGS = 0, f = 1MHz 1.5 800 20 1 3.2 2.4 730 90 40 VGS = 10V, ID = 2A VDD = 200V, RL = 100 40 35 105 5 4 min typ max 0.1 1 Unit mA A V mJ V S pF pF pF ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) * Avalanche energy capacity test circuit L ID Gate VDS Drain Source C VDD PVS RGS 1 Power F-MOS FETs ID VDS 6 3.2 2SK1611 | Yfs | ID Forward transfer admittance |Yfs| (S) RDS(on) ID VDS=25V TC=25C TC=25C 5 VGS=15V 10V 7V Drain to source ON-resistance RDS(on) () 10 TC=25C 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 8 Drain current ID (A) 6V 4 6 3 4 2 5V 1 50W VGS=10V 15V 2 4V 0 0 10 20 30 40 50 60 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 Drain to source voltage VDS (V) Drain current ID (A) Drain current ID (A) ID VGS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 6 VDS=25V TC=25V 5 10000 Ciss, Coss, Crss VDS 160 TC=25C 140 ton, tf, td(off) ID VDD=200V VGS=10V TC=25C 3000 Switching time ton,tf,td(off) (ns) Drain current ID (A) 120 td(off) 100 80 60 ton 40 tf 20 0 4 1000 Ciss 300 3 2 100 Coss 30 Crss 10 0 40 80 120 160 200 240 1 0 0 2 4 6 8 10 0 1 2 3 4 5 6 Gate to source voltage VGS (V) Drain to source voltage VDS (V) Drain current ID (A) PD Ta 60 Area of safe operation (ASO) 100 30 10 3 1 0.3 0.1 0.03 IDP ID DC t=1ms 30 EAS Tj Avalanche energy capacity EAS (mJ) ID=3A VDD=50V 25 Allowable power dissipation PD (W) 50 (1) TC=Ta (2) Without heat sink (PD=2W) Non repetitive pulse TC=25C 40 (1) 30 Drain current ID (A) 20 15 20 10ms 10 10 (2) 0 0 20 40 60 80 100 120 140 160 0.01 1 3 10 30 100 300 1000 5 0 25 50 75 100 125 150 175 Ambient temperature Ta (C) Drain to source voltage VDS (V) Junction temperature Tj (C) 2 |
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